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[Analysis Case] Evaluation of Interstitial Carbon in Si Substrate Using Low-Temperature PL and SIMS Analysis

It is possible to confirm the trace amounts of carbon contained in the Si substrate.

When ions or electron beams are irradiated onto Si, a portion of the "substitutional carbon" that is slightly contained in Si changes into "interstitial carbon." This interstitial carbon is believed to influence the electrical properties of the device. The behavior related to interstitial carbon can be observed very sensitively through low-temperature PL analysis, allowing insights into trace amounts of carbon below the detection limit of SIMS analysis. This document presents examples of low-temperature PL analysis and SIMS analysis conducted on Si substrates subjected to ion implantation.